Defect reduction in seeded aluminum nitride crystal growth
Abstract
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
- Inventors:
- Issue Date:
- Research Org.:
- CRYSTAL IS, INC., Green Island, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1351836
- Patent Number(s):
- 9624601
- Application Number:
- 14/458,861
- Assignee:
- CRYSTAL IS, INC.
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- 70NANB4H3051
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Aug 13
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Bondokov, Robert T., Morgan, Kenneth E., Schowalter, Leo J., and Stack, Glen A. Defect reduction in seeded aluminum nitride crystal growth. United States: N. p., 2017.
Web.
Bondokov, Robert T., Morgan, Kenneth E., Schowalter, Leo J., & Stack, Glen A. Defect reduction in seeded aluminum nitride crystal growth. United States.
Bondokov, Robert T., Morgan, Kenneth E., Schowalter, Leo J., and Stack, Glen A. Tue .
"Defect reduction in seeded aluminum nitride crystal growth". United States. https://www.osti.gov/servlets/purl/1351836.
@article{osti_1351836,
title = {Defect reduction in seeded aluminum nitride crystal growth},
author = {Bondokov, Robert T. and Morgan, Kenneth E. and Schowalter, Leo J. and Stack, Glen A.},
abstractNote = {Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 18 00:00:00 EDT 2017},
month = {Tue Apr 18 00:00:00 EDT 2017}
}
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