Defect reduction in seeded aluminum nitride crystal growth
Abstract
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
- Inventors:
- Issue Date:
- Research Org.:
- Crystal IS Inc., Green Island, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1576373
- Patent Number(s):
- 10392722
- Assignee:
- Crystal IS, Inc. (Green Island, NY)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- FC26-08NT01578
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2017 Aug 24
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., and Gibb, Shawn Robert. Defect reduction in seeded aluminum nitride crystal growth. United States: N. p., 2019.
Web.
Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., & Gibb, Shawn Robert. Defect reduction in seeded aluminum nitride crystal growth. United States.
Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., and Gibb, Shawn Robert. Tue .
"Defect reduction in seeded aluminum nitride crystal growth". United States. https://www.osti.gov/servlets/purl/1576373.
@article{osti_1576373,
title = {Defect reduction in seeded aluminum nitride crystal growth},
author = {Bondokov, Robert T. and Schowalter, Leo J. and Morgan, Kenneth and Slack, Glen A. and Rao, Shailaja P. and Gibb, Shawn Robert},
abstractNote = {Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {8}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Defect reduction in seeded aluminum nitride crystal growth
patent, December 2012
- Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.
- US Patent Document 8,323,406
NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS
patent-application, November 2009
- Schowalter, Leo J.; Smart, Joseph A.; Liu, Shiwen
- US Patent Application 11/503660; 20090283028