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Title: Defect reduction in seeded aluminum nitride crystal growth

Abstract

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Crystal IS Inc., Green Island, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1576373
Patent Number(s):
10392722
Assignee:
Crystal IS, Inc. (Green Island, NY)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
FC26-08NT01578
Resource Type:
Patent
Resource Relation:
Patent File Date: 2017 Aug 24
Country of Publication:
United States
Language:
English

Citation Formats

Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., and Gibb, Shawn Robert. Defect reduction in seeded aluminum nitride crystal growth. United States: N. p., 2019. Web.
Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., & Gibb, Shawn Robert. Defect reduction in seeded aluminum nitride crystal growth. United States.
Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., and Gibb, Shawn Robert. Tue . "Defect reduction in seeded aluminum nitride crystal growth". United States. https://www.osti.gov/servlets/purl/1576373.
@article{osti_1576373,
title = {Defect reduction in seeded aluminum nitride crystal growth},
author = {Bondokov, Robert T. and Schowalter, Leo J. and Morgan, Kenneth and Slack, Glen A. and Rao, Shailaja P. and Gibb, Shawn Robert},
abstractNote = {Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {8}
}

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Works referenced in this record:

Defect reduction in seeded aluminum nitride crystal growth
patent, December 2012