Defect reduction in seeded aluminum nitride crystal growth
Abstract
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
- Inventors:
- Issue Date:
- Research Org.:
- CRYSTAL IS, INC. Green Island, NY (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1361546
- Patent Number(s):
- 9670591
- Application Number:
- 14/458,825
- Assignee:
- CRYSTAL IS, INC.
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- 70NANB4H3051
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 2014 Aug 13
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Bondokov, Robert T., Morgan, Kenneth E., Schowalter, Leo J., and Slack, Glen A. Defect reduction in seeded aluminum nitride crystal growth. United States: N. p., 2017.
Web.
Bondokov, Robert T., Morgan, Kenneth E., Schowalter, Leo J., & Slack, Glen A. Defect reduction in seeded aluminum nitride crystal growth. United States.
Bondokov, Robert T., Morgan, Kenneth E., Schowalter, Leo J., and Slack, Glen A. Tue .
"Defect reduction in seeded aluminum nitride crystal growth". United States. https://www.osti.gov/servlets/purl/1361546.
@article{osti_1361546,
title = {Defect reduction in seeded aluminum nitride crystal growth},
author = {Bondokov, Robert T. and Morgan, Kenneth E. and Schowalter, Leo J. and Slack, Glen A.},
abstractNote = {Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {6}
}
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