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Title: Defect reduction in seeded aluminum nitride crystal growth

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
1361546
Assignee:
CRYSTAL IS, INC. CHO
Patent Number(s):
9,670,591
Application Number:
14/458,825
Contract Number:
70NANB4H3051
Resource Relation:
Patent File Date: 2014 Aug 13
Research Org:
CRYSTAL IS, INC. Green Island, NY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

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