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Title: Defect reduction in seeded aluminum nitride crystal growth

Abstract

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Inventors:
; ; ; ; ;
Issue Date:
Research Org.:
Crystal IS, Inc., Green Island, NY (United States); National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1823990
Patent Number(s):
11015263
Application Number:
16/505,840
Assignee:
Crystal IS, Inc. (Green Island, NY)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
DOE Contract Number:  
70NANB4H3051; FC26-08NT01578
Resource Type:
Patent
Resource Relation:
Patent File Date: 07/09/2019
Country of Publication:
United States
Language:
English

Citation Formats

Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., and Gibb, Shawn Robert. Defect reduction in seeded aluminum nitride crystal growth. United States: N. p., 2021. Web.
Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., & Gibb, Shawn Robert. Defect reduction in seeded aluminum nitride crystal growth. United States.
Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., and Gibb, Shawn Robert. Tue . "Defect reduction in seeded aluminum nitride crystal growth". United States. https://www.osti.gov/servlets/purl/1823990.
@article{osti_1823990,
title = {Defect reduction in seeded aluminum nitride crystal growth},
author = {Bondokov, Robert T. and Schowalter, Leo J. and Morgan, Kenneth and Slack, Glen A. and Rao, Shailaja P. and Gibb, Shawn Robert},
abstractNote = {Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {5}
}

Works referenced in this record:

Defect reduction in seeded aluminum nitride crystal growth
patent, September 2014


Defect reduction in seeded aluminum nitride crystal growth
patent, June 2017


Defect Reduction in Seeded Aluminum Nitride Crystal Growth
patent-application, December 2017


Defect Reduction and Seeded Aluminum Nitride Crystal Growth
patent-application, April 2019


Defect reduction in seeded aluminum nitride crystal growth
patent, September 2017


Defect reduction in seeded aluminum nitride crystal growth
patent, December 2012


Defect reduction in seeded aluminum nitride crystal growth
patent, November 2018


Thick pseudomorphic nitride epitaxial layers
patent, December 2011


Defect reduction in seeded aluminum nitride crystal growth
patent, April 2017


NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS
patent-application, November 2009