Defect reduction in seeded aluminum nitride crystal growth

Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A.; Rao, Shailaja P.; Gibb, Shawn Robert

Title: Defect reduction in seeded aluminum nitride crystal growth

Abstract

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Inventors:: Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A.; Rao, Shailaja P.; Gibb, Shawn Robert

Issue Date:: 2021-05-25

Research Org.:: Crystal IS, Inc., Green Island, NY (United States); National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1823990

Patent Number(s):: 11015263

Application Number:: 16/505,840

Assignee:: Crystal IS, Inc. (Green Island, NY)

Patent Classifications (CPCs):: C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

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C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B23/00 - Single-crystal growth by condensing evaporated or sublimed materials
C30B23/025 - {characterised by the substrate}
C30B29/403 - {AIII-nitrides}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/2982 - Particulate matter [e.g., sphere, flake, etc.]

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DOE Contract Number:: 70NANB4H3051; FC26-08NT01578

Resource Type:: Patent

Resource Relation:: Patent File Date: 07/09/2019

Country of Publication:: United States

Language:: English

Citation Formats


                    Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., and Gibb, Shawn Robert. Defect reduction in seeded aluminum nitride crystal growth.  United States: N. p., 2021. 
        Web.

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                    Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., & Gibb, Shawn Robert. Defect reduction in seeded aluminum nitride crystal growth.  United States.

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                    Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., and Gibb, Shawn Robert. Tue .  
        "Defect reduction in seeded aluminum nitride crystal growth".  United States.  https://www.osti.gov/servlets/purl/1823990.

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@article{osti_1823990,

  title        = {Defect reduction in seeded aluminum nitride crystal growth},

  author       = {Bondokov, Robert T. and Schowalter, Leo J. and Morgan, Kenneth and Slack, Glen A. and Rao, Shailaja P. and Gibb, Shawn Robert},

  abstractNote = {Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2021},

  month        = {5}

}

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