Defect reduction in seeded aluminum nitride crystal growth
Abstract
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
- Inventors:
- Issue Date:
- Research Org.:
- Crystal IS, Inc., Green Island, NY (United States); National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1823990
- Patent Number(s):
- 11015263
- Application Number:
- 16/505,840
- Assignee:
- Crystal IS, Inc. (Green Island, NY)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- DOE Contract Number:
- 70NANB4H3051; FC26-08NT01578
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 07/09/2019
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., and Gibb, Shawn Robert. Defect reduction in seeded aluminum nitride crystal growth. United States: N. p., 2021.
Web.
Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., & Gibb, Shawn Robert. Defect reduction in seeded aluminum nitride crystal growth. United States.
Bondokov, Robert T., Schowalter, Leo J., Morgan, Kenneth, Slack, Glen A., Rao, Shailaja P., and Gibb, Shawn Robert. Tue .
"Defect reduction in seeded aluminum nitride crystal growth". United States. https://www.osti.gov/servlets/purl/1823990.
@article{osti_1823990,
title = {Defect reduction in seeded aluminum nitride crystal growth},
author = {Bondokov, Robert T. and Schowalter, Leo J. and Morgan, Kenneth and Slack, Glen A. and Rao, Shailaja P. and Gibb, Shawn Robert},
abstractNote = {Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2021},
month = {5}
}
Works referenced in this record:
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Defect reduction in seeded aluminum nitride crystal growth
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