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Title: Growth of large aluminum nitride single crystals with thermal-gradient control

Abstract

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

Inventors:
; ;
Issue Date:
Research Org.:
CRYSTAL IS, INC. Green Island, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1345375
Patent Number(s):
9580833
Application Number:
14/686,812
Assignee:
CRYSTAL IS, INC.
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
FC26-08NT01578
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Apr 15
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Bondokov, Robert T., Rao, Shailaja P., and Schowalter, Leo J.. Growth of large aluminum nitride single crystals with thermal-gradient control. United States: N. p., 2017. Web.
Bondokov, Robert T., Rao, Shailaja P., & Schowalter, Leo J.. Growth of large aluminum nitride single crystals with thermal-gradient control. United States.
Bondokov, Robert T., Rao, Shailaja P., and Schowalter, Leo J.. Tue . "Growth of large aluminum nitride single crystals with thermal-gradient control". United States. https://www.osti.gov/servlets/purl/1345375.
@article{osti_1345375,
title = {Growth of large aluminum nitride single crystals with thermal-gradient control},
author = {Bondokov, Robert T. and Rao, Shailaja P. and Schowalter, Leo J.},
abstractNote = {In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2017},
month = {2}
}

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Works referenced in this record:

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