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Title: Growth of large aluminum nitride single crystals with thermal-gradient control

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
Inventors:
; ;
Issue Date:
OSTI Identifier:
1345375
Assignee:
CRYSTAL IS, INC. NETL
Patent Number(s):
9,580,833
Application Number:
14/686,812
Contract Number:
FC26-08NT01578
Resource Relation:
Patent File Date: 2015 Apr 15
Research Org:
CRYSTAL IS, INC. Green Island, NY (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Other works cited in this record:

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