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Title: Growth of large aluminum nitride single crystals with thermal-gradient control

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.
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Patent File Date: 2015 Apr 15
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CRYSTAL IS, INC. Green Island, NY (United States)
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Country of Publication:
United States

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