skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Defect reduction in seeded aluminum nitride crystal growth

Patent ·
OSTI ID:1361546

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Research Organization:
CRYSTAL IS, INC. Green Island, NY (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
70NANB4H3051
Assignee:
CRYSTAL IS, INC.
Patent Number(s):
9,670,591
Application Number:
14/458,825
OSTI ID:
1361546
Resource Relation:
Patent File Date: 2014 Aug 13
Country of Publication:
United States
Language:
English

References (308)

Magnesium-Aluminum Nitrides patent September 1970
SIGNAL GENERATOR FOR PRODUCING A SET OF SIGNALS AT BASEBAND FREQUENCY AND WITH ADJUSTABLE PHASE SLOPE patent August 1971
INSERT FOR DRILLING UNIT patent September 1971
METHOD FOR PREPARING ALUMINUM NITRIDE AND METAL FLUORIDE SINGLE CRYSTALS patent September 1971
METHOD OF MANUFACTURING ALUMINIUM NITRIDE CRYSTALS FOR SEMICONDUCTOR DEVICES patent January 1972
SINGLE CRYSTAL BERYLLIUM OXIDE GROWTH FROM CALCIUM OXIDE-BERYLLIUM OXIDE MELTS patent October 1973
Adaptive gate video gray level measurement and tracker patent September 1975
Aluminum nitride single crystal growth from a molten mixture with calcium nitride patent January 1976
Adhesive tape bag closure patent February 1977
Method of making semiconductor superlattices free of misfit dislocations patent May 1978
Stable crystalline lithium nitride and process for its preparation patent November 1980
High thermal conductivity aluminum nitride ceramic body patent October 1985
Liquid encapsulated zone melting crystal growth method and apparatus patent October 1991
Aluminum nitride substrate for formation of thin-film conductor layer and semiconductor device using the substrate patent December 1991
Light-emitting diode with diagonal faces patent February 1992
Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor patent March 1994
Aluminum nitride substrate and method for producing same patent May 1994
Method for heat-treating a compound semiconductor patent February 1996
Method for enhancing aluminum nitride patent May 1996
Process for aluminum nitride powder production patent June 1996
Aluminum nitride film substrate and process for producing same patent November 1996
Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same patent September 1997
Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same patent October 1997
Semiconductor package having an aluminum nitride substrate patent December 1997
Aluminum nitride sintered bodies patent March 1998
Method for growing a semiconductor single-crystal patent January 1999
Growth of bulk single crystals of aluminum nitride patent January 1999
Low temperature method of preparing GaN single crystals patent February 1999
Group III-V nitride semiconductor device patent June 1999
IC socket patent July 1999
Growth of bulk single crystals of aluminum nitride from a melt patent September 1999
Growth of bulk single crystals of aluminum nitride patent October 1999
Semiconductor laminating structure patent November 1999
Retractable stairs-like stand patent December 1999
Single crystal of nitride and process for preparing the same patent December 1999
Automated manual transmission controller patent December 1999
Growth of bulk single crystals of aluminum nitride patent April 2000
Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys patent April 2000
Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy patent May 2000
Growth of bulk single crystals of aluminum nitride from a melt patent May 2000
Growth of bulk single crystals of aluminum nitride: silicon carbide alloys patent July 2000
GaN LEDs with improved output coupling efficiency patent July 2000
Tungsten doped crucible and method for preparing same patent February 2001
Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method patent August 2001
Bulk single crystals of aluminum nitride patent October 2001
Crystalline gallium nitride and method for forming crystalline gallium nitride patent June 2002
Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes patent June 2002
Method for Achieving Improved Epitaxy Quality (Surface Texture and Defect Density) on Free-Standing (Aluminum, Indium, Gallium) Nitride ((Al,In,Ga)N) Substrates for Opto-Electronic and Electronic Devices patent September 2002
Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate patent October 2002
Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection patent February 2003
GaN-based devices using thick (Ga, Al, In)N base layers patent March 2003
Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride patent April 2003
Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate patent July 2003
III-V nitride substrate boule and method of making and using the same patent July 2003
Powder metallurgy tungsten crucible for aluminum nitride crystal growth patent April 2004
Method and apparatus for producing large, single-crystals of aluminum nitride patent August 2004
LED reflector for improved light extraction patent August 2004
Light emitting diodes including modifications for light extraction patent September 2004
Group III nitride LED with undoped cladding layer (5000.137) patent October 2004
Light emitting devices with improved extraction efficiency patent December 2004
Methods of bonding two aluminum-comprising masses to one another patent January 2005
Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate patent March 2005
Nitride semiconductor laser patent May 2005
Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens patent July 2005
Bulk GaN and ALGaN single crystals patent August 2005
Ultraviolet-light-based disinfection reactor patent September 2005
Integrated reflector cup for a light emitting device mount patent February 2006
Light emitting diodes including pedestals patent April 2006
Method of manufacturing a semiconductor light-emitting element patent May 2006
Method for polishing a substrate surface patent May 2006
Tantalum based crucible patent June 2006
High pressure high temperature growth of crystalline group III metal nitrides patent June 2006
Nitride ceramics to mount aluminum nitride seed for sublimation growth patent August 2006
Semiconductor package having light sensitive chips patent August 2006
Increased light extraction from a nitride LED patent October 2006
Light emitting diodes (LEDs) with improved light extraction by roughening patent March 2007
Powder metallurgy crucible for aluminum nitride crystal growth patent May 2007
Light emitting device with patterned surfaces patent May 2007
Substrate for nitride semiconductor growth patent July 2007
Card type LED illumination source patent July 2007
Light emitting diode systems patent September 2007
III-V group nitride system semiconductor substrate patent October 2007
Method of manufacturing GaN crystals and GaN crystal substrate, GaN crystals and GaN crystal substrate obtained by the method, and semiconductor device including the same patent October 2007
Nitride based LED with a p-type injection region patent September 2008
Light emitting diodes including transparent oxide layers patent September 2008
Semiconductor light-emitting device and method for fabricating the same patent October 2008
Semiconductor light emitting device and method for manufacturing the same patent January 2009
Semiconductor light emitting devices and submounts patent April 2009
Method and apparatus for aluminum nitride monocrystal boule growth patent April 2009
Light-emitting apparatus patent June 2009
Lighting device package patent December 2009
Nitride semiconductor heterostructures and related methods patent December 2009
Doped aluminum nitride crystals and methods of making them patent January 2010
III group nitride semiconductor substrate, substrate for group III nitride semiconductor device, and fabrication methods thereof patent March 2010
Seeded growth process for preparing aluminum nitride single crystals patent March 2010
Nitride semiconductor substrate, and method for working nitride semiconductor substrate patent May 2010
Light emitting element structure using nitride bulk single crystal layer patent July 2010
Nitride gallium semiconductor substrate and nitride semiconductor epitaxial substrate patent July 2010
Method and apparatus for producing large, single-crystals of aluminum nitride patent August 2010
Aluminum nitride sintered body and semiconductor manufacturing apparatus member patent September 2010
Color control by alteration of wavelength converting element patent March 2011
Method of uniform phosphor chip coating and LED package fabricated using method patent May 2011
Light emitting device patent June 2011
Power surface mount light emitting die package patent July 2011
Methods for controllable doping of aluminum nitride bulk crystals patent September 2011
Thick pseudomorphic nitride epitaxial layers patent December 2011
Deep-eutectic melt growth of nitride crystals patent January 2012
Method and apparatus for producing large, single-crystals of aluminum nitride patent February 2012
Nitride semiconductor heterostructures and related methods patent July 2012
Defect reduction in seeded aluminum nitride crystal growth patent December 2012
Large aluminum nitride crystals with reduced defects and methods of making them patent January 2013
Method and apparatus for producing large, single-crystals of aluminum nitride patent October 2013
Large aluminum nitride crystals with reduced defects and methods of making them patent November 2013
Doped aluminum nitride crystals and methods of making them patent June 2014
Defect reduction in seeded aluminum nitride crystal growth patent September 2014
Method and apparatus for producing large, single-crystals of aluminum nitride patent November 2014
Photon extraction from nitride ultraviolet light-emitting devices patent February 2015
Led having angled sides for increased side light extraction patent-application April 2001
Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same patent-application June 2001
Semiconductor device and method and apparatus for manufacturing semiconductor device patent-application September 2001
Use of CSOH in a Dielectric CMP Slurry patent-application December 2001
Light emitting diodes with improved light extraction efficiency patent-application March 2002
Method and apparatus for growing aluminum nitride monocrystals patent-application November 2002
Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles patent-application March 2003
FCSEL that frequency doubles its output emissions using sum-frequency generation patent-application August 2003
Method and apparatus for producing large, single-crystals of aluminum nitride patent-application September 2003
III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same patent-application November 2003
Light-emitting gallium nitride-based compound semiconductor device patent-application November 2003
Method for polishing a substrate surface patent-application February 2004
Drain/source extension structure of a field effect transistor including doped high-k sidewall spacers patent-application June 2004
Gallium nitride material devices and methods of forming the same patent-application July 2004
Method of fabricating monocrystalline crystals patent-application September 2004
Strain compensated semiconductor structures patent-application October 2004
Nitride Semiconductor Layer Structure and a Nitride Semiconductor Laser Incorporating a Portion of Same patent-application October 2004
Methods of growing nitride-based film using varying pulses patent-application November 2004
Methods for machining ceramics patent-application November 2004
Homoepitaxial gallium-nitride-based light emitting device and method for producing patent-application December 2004
Light emitting element structure using nitride bulk single crystal layer patent-application December 2004
Discharge electrode, a discharge lamp and a method for manufacturing the discharge electrode patent-application March 2005
Group-III nitride semiconductor device patent-application April 2005
Large area, uniformly low dislocation density GaN substrate and process for making the same patent-application May 2005
Method and apparatus for fabricating crack-free Group III nitride semiconductor materials patent-application June 2005
AlxInyGa1-x-yN mixture crystal substrate, method of growing same and method of producing same patent-application July 2005
Bulk GaN and AlGaN single crystals patent-application July 2005
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition patent-application September 2005
Surface treatment method and surface treatment device patent-application December 2005
Nitride single crystal and producing method thereof patent-application December 2005
Gallium nitride materials and methods associated with the same patent-application December 2005
Method and apparatus for producing large, single-crystals of aluminum nitride patent-application January 2006
High surface quality GaN wafer and method of fabricating same patent-application February 2006
Substrate for epitaxy and method of preparing the same patent-application March 2006
Nitride-based light emitting heterostructure patent-application June 2006
Compensating liquid delivery system and method patent-application August 2006
Binary group III-nitride based high electron mobility transistors and methods of fabricating same patent-application November 2006
Bonded intermediate substrate and method of making same patent-application November 2006
Method for manufacturing nitride-based semiconductor device patent-application December 2006
Polar surface preparation of nitride substrates patent-application December 2006
Light emitting diodes with high light extraction and high reflectivity patent-application January 2007
Photocrosslinked hydrogel surface coatings patent-application April 2007
Method and apparatus for producing large, single-crystals of aluminum nitride patent-application May 2007
High light extraction efficiency light emitting diode (LED) patent-application May 2007
Doped aluminum nitride crystals and methods of making them patent-application June 2007
Large aluminum nitride crystals with reduced defects and methods of making them patent-application June 2007
Water purifier patent-application July 2007
Method of Fabricating Light Emitting Device and Thus-Fabricated Light Emitting Device patent-application September 2007
Methods for controllable doping of aluminum nitride bulk crystals patent-application October 2007
Seeded growth process for preparing aluminum nitride single crystals patent-application November 2007
Method and apparatus for producing large, single-crystals of aluminum nitride patent-application January 2008
LED PACKAGE WITH CONVERGING EXTRACTOR patent-application January 2008
Light Emitting Devices with Improved Light Extraction Efficiency patent-application January 2008
PULSED GROWTH OF CATALYST-FREE GROWITH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL patent-application February 2008
Light emitting packages and methods of making same patent-application March 2008
Compound semiconductor modified surface by use of pulsed electron beam and ion implantation through a deposited metal layer patent-application April 2008
Semiconductor Devices Having Low Threading Dislocations and Improved Light Extraction and Methods of Making the Same patent-application May 2008
Nitride light-emitting device patent-application May 2008
Spatial localization of light-generating portions in LEDs patent-application June 2008
CHIP-SCALE METHODS FOR PACKAGING LIGHT EMITTING DEVICES AND CHIP-SCALE PACKAGED LIGHT EMITTING DEVICES patent-application June 2008
LIGHT EMITTING DEVICES WITH AN ELECTRICALLY ACTIVE TOP REFLECTOR CONTACT patent-application June 2008
SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE, LIGHTING APPARATUS, DISPLAY ELEMENT AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE patent-application June 2008
LIGHT-EMITTING APPARATUS AND METHOD OF PRODUCING THE SAME patent-application June 2008
LIGHT-EMITTING DEVICES patent-application July 2008
Self-luminous device patent-application July 2008
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH patent-application July 2008
Thick Pseudomorphic Nitride Epitaxial Layers patent-application August 2008
Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding patent-application August 2008
SEMICONDUCTOR LIGHT-EMITTING DEVICE patent-application October 2008
Semiconductor light-emitting device, method for manufacturing the same, and light-emitting apparatus including the same patent-application October 2008
Light emitting diode chip patent-application October 2008
Semiconductor Light Emitting Device, Illumination Module, Illumination Apparatus, Method For Manufacturing Semiconductor Light Emitting Device, and Method For Manufacturing Semiconductor Light Emitting Element patent-application January 2009
PATTERNED LIGHT EMITTING DEVICES patent-application January 2009
Group III nitride-based compound semiconductor light emitting device patent-application February 2009
DEEP-EUTECTIC MELT GROWTH OF NITRIDE CRYSTALS patent-application February 2009
WHITE LIGHT LED WITH MULTIPLE ENCAPSULATION LAYERS patent-application March 2009
METHOD OF MAKING AN LED DEVICE HAVING A DOME LENS patent-application March 2009
LIGHT EMITTING DEVICE patent-application March 2009
NITRIDE SEMICONDUCTOR ULTRAVIOLET LEDS WITH TUNNEL JUNCTIONS AND REFLECTIVE CONTACT patent-application April 2009
LED with current confinement structure and surface roughening patent-application May 2009
HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) USING GLASS PACKAGING patent-application May 2009
Substrate-free light emitting diode chip patent-application June 2009
LIGHT OUTPUT ENHANCED GALLIUM NITRIDE BASED THIN LIGHT EMITTING DIODE patent-application June 2009
PROTECTION OF SIGE DURING ETCH AND CLEAN OPERATIONS patent-application June 2009
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING SAME patent-application June 2009
LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR FABRICATING THE SAME patent-application June 2009
LIGHT EMITTING DEVICE patent-application July 2009
LIGHT EMITTING DEVICES WITH HIGH EFFICIENCY PHOSPOR STRUCTURES patent-application July 2009
Led with substrate modifications for enhanced light extraction and method of making same patent-application September 2009
AlGaN SUBSTRATE AND PRODUCTION METHOD THEREOF patent-application September 2009
LEDs using single crystalline phosphor and methods of fabricating same patent-application October 2009
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME patent-application October 2009
SEMICONDUCTOR LIGHT EMITTING DEVICE patent-application October 2009
LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF patent-application November 2009
NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS patent-application November 2009
Light emitting elements, light emitting devices including light emitting elements and methods of manufacturing such light emitting elements and/or devices patent-application December 2009
LED WITH IMPROVED EXTERNAL LIGHT EXTRACTION EFFICIENCY patent-application December 2009
SEMICONDUCTOR LIGHT-EMITTING DEVICE patent-application December 2009
LIGHT EMITTING DEVICE patent-application January 2010
Diode having high brightness and method thereof patent-application January 2010
HIGHLY EFFICIENT GALLIUM NITRIDE BASED LIGHT EMITTING DIODES VIA SURFACE ROUGHENING patent-application February 2010
BOND PAD DESIGN FOR ENHANCING LIGHT EXTRACTION FROM LED CHIPS patent-application February 2010
NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS patent-application June 2010
Doped Aluminum Nitride Crystals and Methods of Making Them patent-application July 2010
THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS patent-application October 2010
In-line Fluid Treatment by UV Radiation patent-application December 2010
ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM patent-application January 2011
LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE patent-application January 2011
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE patent-application January 2011
GROWTH OF LARGE ALUMINUM NITRIDE SINGLE CRYSTALS WITH THERMAL-GRADIENT CONTROL patent-application January 2012
POLYCRYSTALLINE ALUMINUM NITRIDE MATERIAL AND METHOD OF PRODUCTION THEREOF patent-application January 2012
THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS patent-application May 2012
P-CONTACT AND LIGHT-EMITTING DIODE FOR THE ULTRAVIOLET SPECTRAL RANGE patent-application June 2012
LIGHT EMITTING DEVICES, SYSTEMS, AND METHODS OF MANUFACTURING patent-application January 2013
ULTRAVIOLET LIGHT EMITTING DEVICES HAVING ENHANCED LIGHT EXTRACTION patent-application April 2013
ULTRAVIOLET LIGHT EMITTING DEVICE INCORPORTING OPTICALLY ABSORBING LAYERS patent-application April 2013
LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM patent-application June 2013
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH patent-application June 2013
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE patent-application March 2014
LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM patent-application April 2014
PHOTON EXTRACTION FROM NITRIDE ULTRAVIOLET LIGHT-EMITTING DEVICES patent-application July 2014
DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM patent-application August 2014
PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES HAVING PLANAR CONTACTS patent-application September 2014
DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH patent-application January 2015
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE patent-application March 2015
Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode journal February 2012
Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes journal August 2006
Structural and optical properties of near-UV LEDs grown on V-grooved sapphire substrates fabricated by wet etching journal January 2007
Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate journal November 2008
Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes journal April 2012
Fabrication of moth-eye structure on p-GaN layer of GaN-based LEDs for improvement of light extraction journal July 2009
Optimizing textured structures possessing both optical gradient and diffraction properties to increase the extraction efficiency of light-emitting diodes journal October 2012
Improvement of light extraction efficiency of UV-LED grown on low-dislocation-density AlGaN journal November 2003
Enhancement of light extraction efficiency of ultraviolet light emitting diodes by patterning of SiO2 nanosphere arrays journal February 2009
Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate journal January 2007
Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector journal February 2010
Enhancement of (AlGaIn)N near-UV LED efficiency using freestanding GaN substrate journal May 2008
Recent Developments in Nitride Chemistry journal October 1998
340–350 nm GaN-free UV-LEDs journal November 2003
AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates journal February 2004
Study on photoluminescence of GaN-based UV-LEDs with refractive index gradient polymeric nanopatterns journal July 2011
Very low dislocation density AlN substrates for device applications conference February 2006
Enhanced light output power of near UV light emitting diodes with graphene / indium tin oxide nanodot nodes for transparent and current spreading electrode journal January 2011
III-nitride blue and UV photonic-crystal light-emitting diodes conference October 2004
Light Extraction Methods in Light-Emitting Diodes conference January 2011
Growth of nitride crystals, BN, AlN and GaN by using a Na flux journal April 2000
Enhancement of light extraction from light emitting diodes journal February 2011
Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys journal December 2004
Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates journal August 2002
Sublimation growth and characterization of bulk aluminum nitride single crystals journal August 1997
Characterization of bulk AlN with low oxygen content journal September 2004
Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes journal November 2003
Mixing Rocksalt and Wurtzite Structure Binary Nitrides to Form Novel Ternary Alloys: ScGaN and MnGaN journal January 2003
On the preparation, optical properties and electrical behaviour of aluminium nitride journal April 1967
Phase equilibria pertinent to the growth of cubic boron nitride journal May 1972
The estimation of maximum growth rate for aluminium nitride crystals grown by direct sublimation journal November 1992
Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality journal January 2002
Electrical conductivity of materials from mixed aluminum and silicon nitrides journal November 1970
Photoluminescence Intensity and Spectral Distribution of GaN Films on SiC Substrates — The Dependence on Dislocation Density and Structure journal November 1999
Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy journal May 2005
The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation journal January 1970
Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere journal November 1999
The BeO — MgO system journal January 1964
A Global Growth Rate Model for Aluminum Nitride Sublimation journal January 2002
Characterization of Aluminum Nitride Crystals Grown by Sublimation journal December 2001
Sublimation growth of AlN bulk crystals in Ta crucibles journal July 2005
Effects of Al composition on luminescence properties of europium implanted AlxGa1−xN (0 ≤ x ≤ 1) journal December 2003
Mass transfer in AlN crystal growth at high temperatures journal March 2004
Determination of the critical layer thickness in the InGaN/GaN heterostructures journal November 1999
Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN journal December 2002
X-ray characterization of bulk AIN single crystals grown by the sublimation technique journal March 2003
Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals journal May 2002
Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals journal January 2002
Report on the growth of bulk aluminum nitride and subsequent substrate preparation journal October 2001
Growth of AlN bulk crystals from the vapor phase journal January 2001
Seeded growth of AlN bulk single crystals by sublimation journal June 2002
Fabrication of native, single-crystal AlN substrates journal December 2003
On mechanisms of sublimation growth of AlN bulk crystals journal April 2000
Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements journal January 2005
Physical vapor transport growth of large AlN crystals journal March 2003
Chemical Mechanical Polishing of Gallium Nitride journal January 2002
Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers journal November 2001
DX -center formation in wurtzite and zinc-blende Al x Ga 1 x N journal January 1998
Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition journal May 2003
Synthesis of the Cubic Form of Boron Nitride journal March 1961
Preparation of GaN Single Crystals Using a Na Flux journal February 1997
DX -behavior of Si in AlN journal June 2000
Seeded growth of AlN single crystals by physical vapor transport journal January 2006
Crucible materials for growth of aluminum nitride crystals journal July 2005
Native oxide and hydroxides and their implications for bulk AlN crystal growth journal August 2008
Properties of Bulk AlN grown by thermodecomposition of AlCl3⋅NH3 journal September 2003