La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrode technology for Pb(Zr, Ti)O{sub 3} thin film nonvolatile memories
Oxide electrode technology is investigated for optimization of Pb(Zr,Ti)O{sub 3} (PZT) thin film capacitor properties for high density nonvolatile memory applications. PZT thin film capacitors with RF sputter deposited La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO) electrodes have been characterized with respect to the following parameters: initial dielectric hysteresis loop characteristics, fatigue performance, microstructure and imprint behavior. Our studies have determined that the fatigue of PZT capacitors with LSCO electrodes is less sensitive to B site cation ratio and underlying electrode stack technology than with RuO{sub 2} electrodes. Doping PZT thin films with Nb (PNZT) improves imprint behavior of LSCO//PZT//LSCO capacitors considerably. We have demonstrated that PNZT 4/30/70 // LSCO capacitors thermally processed at either 550{degrees}C or 675{degrees}C have almost identical initial hysteresis properties and exhibit essentially no fatigue out to approximately 10{sup 10} cycles.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 90243
- Report Number(s):
- SAND--95-1374C; CONF-950728--1; ON: DE95014863
- Country of Publication:
- United States
- Language:
- English
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