La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/Pb(Nb{sub 0.04}Zr{sub 0.28}Ti{sub 0.68})O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} thin film heterostructures on Si using TiN/Pt conducting barrier

Journal Article · Tue Jul 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119536· OSTI ID:526845

Yang, B; Aggarwal, S; Dhote, A M; Song, T K; Ramesh, R ^[1]; Lee, J S ^[2]

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1. Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742 (United States)
2. LG Electronics Research Center, Seocho-Gu, Seoul 137-140 (Korea)

A high density ferroelectric memory process flow requires the integration of conducting barrier layers to connect the drain of the pass-gate transistor to the bottom electrode of the ferroelectric stack. We are studying the effect of crystallinity of the TiN/Pt barrier layer with Si wafers on the ferroelectric properties of La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/Pb(Nb{sub 0.04}Zr{sub 0.28}Ti{sub 0.68})O{sub 3}/La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO/PNZT/LSCO) capacitors. Structural studies indicate complete phase purity (i.e., fully perovskite) in both epitaxial and polycrystalline materials. The polycrystalline capacitors show lower remnant polarization and coercive voltages. However, the retention, fatigue, and imprint characteristics are similar, indicating minimal influence of crystalline quality on the ferroelectric properties. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 526845
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 71; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITORS
COBALT OXIDES
CRYSTAL STRUCTURE
DIFFUSION BARRIERS
FERROELECTRIC MATERIALS
HETEROJUNCTIONS
LANTHANUM COMPOUNDS
LANTHANUM OXIDES
LEAD COMPOUNDS
MEMORY DEVICES
PLATINUM
PZT
SILICON
STRONTIUM COMPOUNDS
STRONTIUM OXIDES
THIN FILMS
TITANIUM COMPOUNDS
TITANIUM NITRIDES