Low temperature processing of Nb-doped Pb(Zr,Ti)O{sub 3} capacitors with La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrodes
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
The effect of crystallization temperature on the electrical properties of sol-gel derived Pb(Zr,Ti,Nb)O{sub 3} or PNZT capacitors with La{sub 0.5}Sr{sub 0.5}CoO{sub 3} (LSCO) electrodes has been investigated. It is demonstrated that LSCO//PNZT(4/30/70)//LSCO capacitors can be fabricated at temperatures as low as 550{degree}C without significant degradation in their ferroelectric and dielectric properties. Lowering the process temperature to 500{degree}C resulted in substantial degradation in capacitor properties. Nonetheless, all capacitors processed in the 500{degree}C to 675{degree}C range exhibited essentially no fatigue up to 5{times}10{sup 9} switching cycles. The low temperature processing is significant as it indicates that this ferroelectric capacitor technology is compatible with high density nonvolatile memory architectures. In other words, these process temperatures are low enough to maintain plug integrity and to prevent degradation of the underlying CMOS circuitry in a high density ferroelectric memory. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 277152
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 68; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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