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Mask fabrication process

Patent ·
OSTI ID:872818
 [1]
  1. Oakland, CA
+ Show Author Affiliations

A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

Research Organization:
SANDIA CORP
DOE Contract Number:
AC04-94AL85000
Assignee:
EUV LLC (Santa Clara, CA)
Patent Number(s):
US 6015640
OSTI ID:
872818
Country of Publication:
United States
Language:
English

References (3)

Reflective mask technologies and imaging results in soft x-ray projection lithography journal November 1991
Reflection mask technology for x-ray projection lithography journal November 1989
Applications of microfabrication technology to x-ray laser cavities
  • Hawryluk, Andrew M.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, Issue 6, Article No. 2153 https://doi.org/10.1116/1.584105
journal November 1988

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Related Subjects

/430/
absorber
absorber layer
absorber material
chances
coatings
conventionally
damaging
eliminating
entire
entire surface
etch
etched
exposed
fabricating
fabrication
fabrication process
following
layer
lithography
lithography systems
mask
mask fabrication
masks
material
method
oxygen
oxygen plasma
pattern
patterned
patterning
photoresist
plasma
plasma etch
portion
process
projection
projection lithography
protective
radiation
regions
remaining
removed
reticles
solution
sorber material
step
strip
substrate
surface
systems
top
underlying
useful
uv-exposed