Mask fabrication process
Patent
·
OSTI ID:20013924
A method for fabricating masks and reticles useful for projection lithography systems is disclosed. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.
- Sponsoring Organization:
- US Department of Energy
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 20013924
- Country of Publication:
- United States
- Language:
- English
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