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Title: Etched-multilayer phase shifting masks for EUV lithography

Abstract

A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.

Inventors:
;
Publication Date:
Research Org.:
EUV Limited Liability Corporation, Santa Clara, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1175305
Patent Number(s):
6,875,543
Application Number:
10/256,377
Assignee:
EUV Limited Liability Corporation (Santa Clara, CA) OSTI
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Chapman, Henry N., and Taylor, John S. Etched-multilayer phase shifting masks for EUV lithography. United States: N. p., 2005. Web.
Chapman, Henry N., & Taylor, John S. Etched-multilayer phase shifting masks for EUV lithography. United States.
Chapman, Henry N., and Taylor, John S. Tue . "Etched-multilayer phase shifting masks for EUV lithography". United States. https://www.osti.gov/servlets/purl/1175305.
@article{osti_1175305,
title = {Etched-multilayer phase shifting masks for EUV lithography},
author = {Chapman, Henry N. and Taylor, John S.},
abstractNote = {A method is disclosed for the implementation of phase shifting masks for EUV lithography. The method involves directly etching material away from the multilayer coating of the mask, to cause a refractive phase shift in the mask. By etching into the multilayer (for example, by reactive ion etching), rather than depositing extra material on the top of the multilayer, there will be minimal absorption loss associated with the phase shift.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 05 00:00:00 EDT 2005},
month = {Tue Apr 05 00:00:00 EDT 2005}
}

Patent:

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