Mask technologies for soft-x-ray projection lithography at 13 nm

Journal Article · Tue Nov 30 23:00:00 EST 1993 · Applied Optics; (United States)

DOI:https://doi.org/10.1364/AO.32.007007· OSTI ID:5276792

Tennant, D M; Fetter, L A; Mulgrew, P P; Wood, II, O R ^[1]; Harriott, L R; Waskiewicz, W K; Windt, D L ^[2]; MacDowell, A A ^[3]; Pastalan, J Z ^[4]

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1. AT T Bell Laboratories at Holmdel, New Jersey 07733 (United States)
2. AT T Bell Laboratories at Murray Hill, New Jersey 07974 (United States)
3. Brookhaven National Laboratory, Upton, New York 11973 (United States)
4. Department of Physics, Boston University, Boston, Massachusetts 02215 (United States)

We describe a variety of technologies for patterning transmissive and reflective soft x-ray projection lithography masks containing features as small as 0.1 [mu]m. The transmission masks fabricated for use at 13 nm are of one type, a Ge-absorbing layer patterned on a boron-doped Si membrane. Reflective masks were patterned by various methods that included absorbing layers formed on top of multilayer reflectors, multilayer-reflector-coating removal by reactive ion etching, and ion damage of multilayer regions by ion implantation. For the first time, we believe, a process for absorber repair that does not significantly damage the reflectance of the multilayer coating on the reflection mask is demonstrated.

• OSTI ID: 5276792
• Journal Information: Applied Optics; (United States), Journal Name: Applied Optics; (United States) Vol. 32:34; ISSN APOPAI; ISSN 0003-6935
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ALLOYS
BORON ADDITIONS
BORON ALLOYS
COATINGS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
GERMANIUM
INTEGRATED CIRCUITS
IONIZING RADIATIONS
MASKING
METALS
MICROELECTRONIC CIRCUITS
PRINTED CIRCUITS
RADIATIONS
REFLECTIVE COATINGS
REPAIR
SEMIMETALS
SILICON
SOFT X RADIATION
X RADIATION