Mask fabrication process
Patent
·
OSTI ID:872818
- Oakland, CA
A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- EUV LLC (Santa Clara, CA)
- Patent Number(s):
- US 6015640
- OSTI ID:
- 872818
- Country of Publication:
- United States
- Language:
- English
Reflection mask technology for x-ray projection lithography
|
journal | November 1989 |
Reflective mask technologies and imaging results in soft x-ray projection lithography
|
journal | November 1991 |
Applications of microfabrication technology to x-ray laser cavities
|
journal | November 1988 |
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Related Subjects
mask
fabrication
process
method
fabricating
masks
reticles
useful
projection
lithography
systems
absorber
layer
conventionally
patterned
pattern
etch
following
step
patterning
entire
surface
remaining
top
photoresist
portion
underlying
protective
material
etched
exposed
radiation
uv-exposed
regions
removed
solution
eliminating
oxygen
plasma
strip
chances
damaging
substrate
coatings
projection lithography
fabrication process
absorber material
entire surface
absorber layer
lithography systems
plasma etch
oxygen plasma
sorber material
mask fabrication
/430/
fabrication
process
method
fabricating
masks
reticles
useful
projection
lithography
systems
absorber
layer
conventionally
patterned
pattern
etch
following
step
patterning
entire
surface
remaining
top
photoresist
portion
underlying
protective
material
etched
exposed
radiation
uv-exposed
regions
removed
solution
eliminating
oxygen
plasma
strip
chances
damaging
substrate
coatings
projection lithography
fabrication process
absorber material
entire surface
absorber layer
lithography systems
plasma etch
oxygen plasma
sorber material
mask fabrication
/430/