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Title: Mask fabrication process

Patent ·
OSTI ID:872818

A method for fabricating masks and reticles useful for projection lithography systems. An absorber layer is conventionally patterned using a pattern and etch process. Following the step of patterning, the entire surface of the remaining top patterning photoresist layer as well as that portion of an underlying protective photoresist layer where absorber material has been etched away is exposed to UV radiation. The UV-exposed regions of the protective photoresist layer and the top patterning photoresist layer are then removed by solution development, thereby eliminating the need for an oxygen plasma etch and strip and chances for damaging the surface of the substrate or coatings.

Research Organization:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
DOE Contract Number:
AC04-94AL85000
Assignee:
EUV LLC (Santa Clara, CA)
Patent Number(s):
US 6015640
OSTI ID:
872818
Country of Publication:
United States
Language:
English

References (3)

Reflection mask technology for x-ray projection lithography journal November 1989
Reflective mask technologies and imaging results in soft x-ray projection lithography journal November 1991
Applications of microfabrication technology to x-ray laser cavities
  • Hawryluk, Andrew M.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, Issue 6, Article No. 2153 https://doi.org/10.1116/1.584105
journal November 1988