Process for forming retrograde profiles in silicon
Patent
·
OSTI ID:870641
- San Jose, CA
- Phoenix, AZ
A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Number(s):
- US 5565377
- OSTI ID:
- 870641
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/438/117/
1-1e4
air
appropriate
concentrations
consisting
crystalline
crystalline silicon
depending
directed
dopant
dopant concentrations
doped
doped silicon
duration
energy
energy source
exposing
forming
forming retrograde
heated
high-intensity
intensity laser
introducing
laser
laser pulse
laser pulses
laser treatment
melts
multiple
n-
oscillatory
p-type
p-type dopant
peak
performed
polycrystalline
polycrystalline silicon
prior
process
process consisting
produced
profiles
pulses
retrograde
selected
selected temperature
silicon
source
surface
temperature
time
time duration
treatment
type dopant
vacuum
vary
1-1e4
air
appropriate
concentrations
consisting
crystalline
crystalline silicon
depending
directed
dopant
dopant concentrations
doped
doped silicon
duration
energy
energy source
exposing
forming
forming retrograde
heated
high-intensity
intensity laser
introducing
laser
laser pulse
laser pulses
laser treatment
melts
multiple
n-
oscillatory
p-type
p-type dopant
peak
performed
polycrystalline
polycrystalline silicon
prior
process
process consisting
produced
profiles
pulses
retrograde
selected
selected temperature
silicon
source
surface
temperature
time
time duration
treatment
type dopant
vacuum
vary