Process for forming retrograde profiles in silicon

Patent · Mon Jan 01 00:00:00 EST 1996

OSTI ID:870641

Weiner, Kurt H ^[1]; Sigmon, Thomas W ^[2]

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1. San Jose, CA
2. Phoenix, AZ

A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: Regents of University of California (Oakland, CA)
• Patent Number(s): US 5565377
• OSTI ID: 870641
• Country of Publication: United States
• Language: English

Related Subjects

process
forming
retrograde
profiles
silicon
oscillatory
crystalline
polycrystalline
consisting
introducing
n-
p-type
dopant
prior
doped
exposing
multiple
pulses
high-intensity
laser
appropriate
energy
source
melts
time
duration
depending
directed
peak
surface
concentrations
vary
1-1e4
produced
treatment
performed
air
vacuum
temperature
heated
selected
laser pulses
laser pulse
energy source
polycrystalline silicon
crystalline silicon
time duration
p-type dopant
selected temperature
doped silicon
type dopant
process consisting
intensity laser
forming retrograde
dopant concentrations
laser treatment
/438/117/