Process for forming retrograde profiles in silicon
Patent
·
OSTI ID:379937
A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.
- Research Organization:
- University of California
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Univ. of California, Oakland, CA (United States)
- Patent Number(s):
- US 5,565,377/A/
- Application Number:
- PAN: 8-329,959
- OSTI ID:
- 379937
- Country of Publication:
- United States
- Language:
- English
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