Controlling Dopant Profiles in Hyperdoped Silicon by Modifying Dopant Evaporation Rates During Pulsed Laser Melting

Recht, Daniel; Sullivan, Joseph T.; Reedy, Robert; Buonassisi, Tonio; Aziz, Michael J.

doi:10.1063/1.3695171

Controlling Dopant Profiles in Hyperdoped Silicon by Modifying Dopant Evaporation Rates During Pulsed Laser Melting

Journal Article · Mon Mar 12 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3695171· OSTI ID:1047958

Recht, Daniel; Sullivan, Joseph T.; Reedy, Robert; Buonassisi, Tonio; Aziz, Michael J.

We describe a method to control the sub-surface dopant profile in 'hyperdoped' silicon fabricated by ion implantation and pulsed laser melting. Dipping silicon ion implanted with sulfur into hydrofluoric acid prior to nanosecond pulsed laser melting leads to a tenfold increase in the rate of sulfur evaporation from the surface of the melt. This results in an 80% reduction of the near-surface dopant concentration, effectively embedding the hyperdoped region in a layer up to 180 nm beneath the surface. This method should facilitate the development of blocked impurity band devices.

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

DOE Contract Number:: AC36-08GO28308

OSTI ID:: 1047958

Report Number(s):: NREL/JA-5200-55330

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 100; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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14 SOLAR ENERGY
36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EVAPORATION
HYDROFLUORIC ACID
ION IMPLANTATION
LASER MATERIALS
LASERS
MELTING
PROCESSING
SILICON
SILICON IONS
SULFUR
hyperdoped
ion implantation
pulsed laser melting

Controlling Dopant Profiles in Hyperdoped Silicon by Modifying Dopant Evaporation Rates During Pulsed Laser Melting

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