Process for forming retrograde profiles in silicon
Abstract
A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.
- Inventors:
-
- San Jose, CA
- Phoenix, AZ
- Publication Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 870641
- Patent Number(s):
- US 5565377
- Assignee:
- Regents of University of California (Oakland, CA)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; forming; retrograde; profiles; silicon; oscillatory; crystalline; polycrystalline; consisting; introducing; n-; p-type; dopant; prior; doped; exposing; multiple; pulses; high-intensity; laser; appropriate; energy; source; melts; time; duration; depending; directed; peak; surface; concentrations; vary; 1-1e4; produced; treatment; performed; air; vacuum; temperature; heated; selected; laser pulses; laser pulse; energy source; polycrystalline silicon; crystalline silicon; time duration; p-type dopant; selected temperature; doped silicon; type dopant; process consisting; intensity laser; forming retrograde; dopant concentrations; laser treatment; /438/117/
Citation Formats
Weiner, Kurt H, and Sigmon, Thomas W. Process for forming retrograde profiles in silicon. United States: N. p., 1996.
Web.
Weiner, Kurt H, & Sigmon, Thomas W. Process for forming retrograde profiles in silicon. United States.
Weiner, Kurt H, and Sigmon, Thomas W. 1996.
"Process for forming retrograde profiles in silicon". United States. https://www.osti.gov/servlets/purl/870641.
@article{osti_870641,
title = {Process for forming retrograde profiles in silicon},
author = {Weiner, Kurt H and Sigmon, Thomas W},
abstractNote = {A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.},
doi = {},
url = {https://www.osti.gov/biblio/870641},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1996},
month = {Mon Jan 01 00:00:00 EST 1996}
}
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