Method of passivating semiconductor surfaces
Patent
·
OSTI ID:867428
- Golden, CO
A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.
- Research Organization:
- MIDWEST RESEARCH INSTITUTE
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4935384
- OSTI ID:
- 867428
- Country of Publication:
- United States
- Language:
- English
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/438/117/136/148/257/
addition
coherent
compound
constant
constant substantially
device
device formed
disclosed
formed
grown
ii-vi
ii-vi semiconductor
iii-v
interface
lattice
lattice constant
layer
maintain
material
method
mismatched
passivating
passivating semiconductor
selecting
semiconductor
semiconductor compound
semiconductor surface
semiconductor surfaces
substantially
sufficient
surface
surfaces
thickness
thickness sufficient
ultrathin
addition
coherent
compound
constant
constant substantially
device
device formed
disclosed
formed
grown
ii-vi
ii-vi semiconductor
iii-v
interface
lattice
lattice constant
layer
maintain
material
method
mismatched
passivating
passivating semiconductor
selecting
semiconductor
semiconductor compound
semiconductor surface
semiconductor surfaces
substantially
sufficient
surface
surfaces
thickness
thickness sufficient
ultrathin