Method of passivating semiconductor surfaces

Patent · Mon Jan 01 00:00:00 EST 1990

OSTI ID:867428

Wanlass, Mark W ^[1]

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1. Golden, CO

A method of passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4935384
• OSTI ID: 867428
• Country of Publication: United States
• Language: English

Related Subjects

method
passivating
semiconductor
surfaces
iii-v
ii-vi
compound
selecting
material
lattice
constant
substantially
mismatched
grown
ultrathin
layer
surface
thickness
sufficient
maintain
coherent
interface
addition
device
formed
disclosed
thickness sufficient
lattice constant
semiconductor compound
semiconductor surface
semiconductor surfaces
ii-vi semiconductor
passivating semiconductor
device formed
constant substantially
/438/117/136/148/257/