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Title: Stable surface passivation process for compound semiconductors

Abstract

A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.

Inventors:
 [1]
  1. (Edgewood, NM)
Publication Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
873712
Patent Number(s):
US 6228672
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
stable; surface; passivation; process; compound; semiconductors; previously; sulfided; selenided; tellurated; iii-v; semiconductor; concentration; undesired; mid-gap; reduced; formation; near-monolayer; metal-; sulfur; selenium; tellurium; -semiconductor; effective; term; underlying; starting; oxidation; thereon; substantially; removed; treated; form; chalcogen-semiconductor; oxygen-free; atmosphere; chalcogenated; contacted; solution; metal; solubility; chalcogenide; metal-chalcogen-semiconductor; resulting; passivating; layer; provides; protection; level; achieved; freshly; oxygen; free; surface passivation; underlying semiconductor; compound semiconductors; iii-v compound; substantially remove; semiconductor surface; compound semiconductor; layer provides; oxygen-free atmosphere; passivating layer; passivation process; oxygen free; stable surface; table surface; free atmosphere; surface pass; /438/257/

Citation Formats

Ashby, Carol I. H. Stable surface passivation process for compound semiconductors. United States: N. p., 2001. Web.
Ashby, Carol I. H. Stable surface passivation process for compound semiconductors. United States.
Ashby, Carol I. H. Mon . "Stable surface passivation process for compound semiconductors". United States. https://www.osti.gov/servlets/purl/873712.
@article{osti_873712,
title = {Stable surface passivation process for compound semiconductors},
author = {Ashby, Carol I. H.},
abstractNote = {A passivation process for a previously sulfided, selenided or tellurated III-V compound semiconductor surface. The concentration of undesired mid-gap surface states on a compound semiconductor surface is reduced by the formation of a near-monolayer of metal-(sulfur and/or selenium and/or tellurium)-semiconductor that is effective for long term passivation of the underlying semiconductor surface. Starting with the III-V compound semiconductor surface, any oxidation present thereon is substantially removed and the surface is then treated with sulfur, selenium or tellurium to form a near-monolayer of chalcogen-semiconductor of the surface in an oxygen-free atmosphere. This chalcogenated surface is then contacted with a solution of a metal that will form a low solubility chalcogenide to form a near-monolayer of metal-chalcogen-semiconductor. The resulting passivating layer provides long term protection for the underlying surface at or above the level achieved by a freshly chalcogenated compound semiconductor surface in an oxygen free atmosphere.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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