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The passivation of ZnSe(100) surfaces via As capping

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:6111893
; ;  [1]
  1. Bell Communications Research, Red Bank, NJ (United States)

The use of amorphous As layers to protect compound semiconductor surfaces when transferred in air among ultrahigh vacuum systems has been demonstrated for II-V materials containing As and group III metals such as Ga. The authors have extended this passivation, or capping, technique to a new class of materials: the II-VI semiconducting compounds, typified by ZnSe. This capping procedure allows transfer among noninterconnecting systems resulting in clean, highly ordered, and stoichiometric surfaces suitable for heteroepitaxial growth, other fabrication procedures, and fundamental studies.

OSTI ID:
6111893
Report Number(s):
CONF-9009402--
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
Country of Publication:
United States
Language:
English