The passivation of ZnSe(100) surfaces via As capping
Conference
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:6111893
- Bell Communications Research, Red Bank, NJ (United States)
The use of amorphous As layers to protect compound semiconductor surfaces when transferred in air among ultrahigh vacuum systems has been demonstrated for II-V materials containing As and group III metals such as Ga. The authors have extended this passivation, or capping, technique to a new class of materials: the II-VI semiconducting compounds, typified by ZnSe. This capping procedure allows transfer among noninterconnecting systems resulting in clean, highly ordered, and stoichiometric surfaces suitable for heteroepitaxial growth, other fabrication procedures, and fundamental studies.
- OSTI ID:
- 6111893
- Report Number(s):
- CONF-9009402--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ARSENIC
CHALCOGENIDES
CHEMICAL PROPERTIES
COATINGS
DEPOSITION
ELEMENTS
FABRICATION
GALLIUM
METALS
PASSIVATION
PHYSICAL VAPOR DEPOSITION
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMIMETALS
SURFACE COATING
ULTRAHIGH VACUUM
VACUUM SYSTEMS
VAPOR DEPOSITED COATINGS
ZINC COMPOUNDS
ZINC SELENIDES
360601* -- Other Materials-- Preparation & Manufacture
ARSENIC
CHALCOGENIDES
CHEMICAL PROPERTIES
COATINGS
DEPOSITION
ELEMENTS
FABRICATION
GALLIUM
METALS
PASSIVATION
PHYSICAL VAPOR DEPOSITION
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMIMETALS
SURFACE COATING
ULTRAHIGH VACUUM
VACUUM SYSTEMS
VAPOR DEPOSITED COATINGS
ZINC COMPOUNDS
ZINC SELENIDES