Se passivation and regrowth of ZnSe(001) epilayers on GaAs(001)

Journal Article · Wed Jun 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340282· OSTI ID:5184981

Jonker, B T; Krebs, J J; Prinz, G A

We report the use of a Se overlayer to passivate and protect the surface of ZnSe epilayers during prolonged exposure to atmosphere. The samples were grown by molecular-beam epitaxy (MBE) on GaAs (001) substrates and passivated by the deposition of a Se coating near room temperature before removal from the MBE system. The Se coating is readily desorbed in ultrahigh vacuum at substrate temperatures of 115--150 /sup 0/C. The resultant single-crystal surfaces are clean, stoichiometric, and well ordered, as demonstrated by Auger electron spectroscopy and reflection high-energy electron diffraction. Regrowth of ZnSe on these surfaces yields epilayers which exhibit excellent crystalline order comparable to that of continuously grown reference samples, as shown by x-ray double-crystal rocking curves. This Se passivation technique offers a simple means of transferring such II-VI epilayers through atmosphere from the growth system to other facilities while preserving surface single-crystal order and cleanliness.

• Research Organization: Naval Research Laboratory, Washington, DC 20375-5000
• OSTI ID: 5184981
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL GROWTH
DEPOSITION
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HIGH TEMPERATURE
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
PNICTIDES
SELENIDES
SELENIUM
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMIMETALS
SURFACE COATING
ZINC COMPOUNDS
ZINC SELENIDES