Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)
- Department of Physics and Astronomy, University of Missouri-Columbia, Columbia, Missouri 65211 (United States)
- Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)
- School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy- and light-hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- DOE Contract Number:
- FG02-89ER45402
- OSTI ID:
- 124283
- Journal Information:
- Journal of Applied Physics, Vol. 78, Issue 11; Other Information: PBD: 1 Dec 1995
- Country of Publication:
- United States
- Language:
- English
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