Hydrostatic pressure studies of optical transitions in the photoluminescence spectra of Zn[sub 1[minus][ital x]]Cd[sub [ital x]]Se thick epilayers and Zn[sub 1[minus][ital x]]Cd[sub [ital x]]Se/ZnSe strained layer multiple quantum wells
- Department of Physics, University of Missouri, Columbia, Missouri 65211 (United States)
- Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609 (United States)
- Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
The effects of hydrostatic pressure (0--110 kbar) on the energy levels of bulk Zn[sub 0.86]Cd[sub 0.14]Se in the form of a 1 [mu]m thick epilayer and a six period multiple quantum well comprised of 30 A wells of Zn[sub 0.79]Cd[sub 0.21]Se and 400 A barriers of ZnSe (both of which are grown on GaAs substrates by molecular beam epitaxy) are studied together in the same diamond anvil pressure cell at a temperature of 14 K, enabling us to accurately determine and compare the first and second order pressure coefficients for direct gap ZnCdSe transitions in the two samples. Theoretical calculations to determine the energy levels for the quantum well sample in the presence of interlayer strain and hydrostatic pressure are carried out using the finite element method in the eight-band [bold k] [bold mH] [bold p] model, clearly showing the necessity of including a pressure dependent shear deformation potential. The photoluminescence (PL) intensity is irreversibly quenched in both samples by a structural phase transition occurring in ZnCdSe around 105 kbar. The effects of hydrostatic pressure on the lattice vibrational modes in the Raman spectra of bulk ZnCdSe are also studied. [copyright] 1994 American Institute of Physics
- DOE Contract Number:
- FG02-89ER45402
- OSTI ID:
- 6915696
- Report Number(s):
- CONF-921145-; CODEN: APCPCS
- Journal Information:
- AIP Conference Proceedings (American Institute of Physics); (United States), Vol. 309:1; Conference: Production and neutralization of negative ions and beams, Upton, NY (United States), 9-13 Nov 1992; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CADMIUM SELENIDES
PHOTOLUMINESCENCE
ZINC SELENIDES
ENERGY-LEVEL TRANSITIONS
MOLECULAR BEAM EPITAXY
PRESSURE DEPENDENCE
RAMAN SPECTRA
STRAINS
TEMPERATURE RANGE 0013-0065 K
VERY HIGH PRESSURE
CADMIUM COMPOUNDS
CHALCOGENIDES
EPITAXY
LUMINESCENCE
SELENIDES
SELENIUM COMPOUNDS
SPECTRA
TEMPERATURE RANGE
ZINC COMPOUNDS
360606* - Other Materials- Physical Properties- (1992-)