Raman and modulated-reflectivity spectra of a strained pseudomorphic ZnTe epilayer on InAs under pressure

Journal Article · Sat Jan 15 00:00:00 EST 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.49.2181· OSTI ID:5357074

Thomas, R J; Boley, M S; Chandrasekhar, H R; Chandrasekhar, M ^[1]; Parks, C; Ramdas, A K ^[2]; Han, J; Kobayashi, M; Gunshor, R L ^[3]

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1. Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211 (United States)
2. Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)
3. School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

The piezomodulated-, electromodulated-, and photomodulated-reflectivity spectra of a pseudomorphic ZnTe epilayer, grown on an InAs epilayer by molecular-beam epitaxy, exhibit heavy- and light-hole excitonic signatures split by the lattice mismatch induced biaxial compressive strain. This splitting in the pseudomorphic epilayer is studied as a function of applied hydrostatic pressure using photomodulated reflectance spectroscopy at 80 K. With increasing hydrostatic compression, the compressive strain is progressively compensated by the pressure-induced tensile strain. At [similar to]55 kbars the epilayer becomes strain-free, and is under a biaxial tension at higher pressures. The separation between the heavy- and light-hole signatures is superlinear in pressure, suggestive of a strain or volume deformation-dependent shear deformation-potential constant. We also compare the pressure dependence of the Raman LO phonon of the ZnTe epilayer on InAs with that of a bulk ZnTe sample at 13 K. The pressure-dependent strain is found to be linear. Accurate values of the first-order strain derivatives of the LO phonons and mode Grueneisen constants are obtained.

• DOE Contract Number: FG02-89ER45402
• OSTI ID: 5357074
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 49:3; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM ARSENIDES
PHYSICAL PROPERTIES
ZINC TELLURIDES
CHEMISORPTION
PRESSURE DEPENDENCE
RAMAN SPECTRA
REFLECTIVITY
SORPTIVE PROPERTIES
STRAINS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
VERY HIGH PRESSURE
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL REACTIONS
INDIUM COMPOUNDS
OPTICAL PROPERTIES
PNICTIDES
SEPARATION PROCESSES
SORPTION
SPECTRA
SURFACE PROPERTIES
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE RANGE
ZINC COMPOUNDS
360606* - Other Materials- Physical Properties- (1992-)