Raman and photo-modulated reflectivity studies of ZnTe/InAs semiconductor heterostructure under hydrostatic pressure

Conference · Sun Jul 10 04:00:00 EDT 1994 · AIP Conference Proceedings (American Institute of Physics); (United States)

OSTI ID:7016994

Thomas, R J; Boley, M S; Chandrasekhar, H R; Chandrasekhar, M ^[1]; Parks, C; Ramdas, A K ^[2]; Han, J; Kobayashi, M; Gunshor, R L ^[3]

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1. Department of Physics and Astronomy, University of Missouri---Columbia, Columbia, Missouri 65211 (United States)
2. Department of Physics, Purdue University, West Lafayette, Indiana 47907 (United States)
3. School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

The photo--modulated reflectivity spectrum of a biaxially-strained pseudomorphic ZnTe epilayer, grown on an InAs epilayer by molecular beam epitaxy is studied as a function of applied hydrostatic pressure at 80 K. With increasing hydrostatic compression, the biaxially compressive strain is progressively compensated by the pressure induced tensile strain. At approximately 55 kbars the epilayer becomes strain free, and is under a biaxial tension at higher pressures. The separation between the heavy hole and light hole signatures is superlinear in pressure, suggestive of a pressure dependent shear deformation potential constant for the valence and conduction bands. We also compare the pressure dependence of the Raman LO phonon of the ZnTe epilayer on InAs with that of a bulk ZnTe sample at 13 K. The pressure dependent strain is found to be linear. Accurate values of the first order strain derivatives of the LO-phonons and mode Grueneisen constants are obtained. [copyright] 1994 American Institute of Physics

• DOE Contract Number: FG02-89ER45402
• OSTI ID: 7016994
• Report Number(s): CONF-921145--
• Conference Information: Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 309:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
EPITAXY
GRUENEISEN CONSTANT
INDIUM ARSENIDES
INDIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
PRESSURE DEPENDENCE
STRAINS
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
VERY HIGH PRESSURE
ZINC COMPOUNDS
ZINC TELLURIDES