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Interface formation and film morphology for growth of Fe and Co on ZnSe(001)

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:7047855
; ;  [1]
  1. Naval Research Lab., Washington, DC (United States)

The authors report on a study of the growth of Fe and Co films on ZnSe(001) epilayers and GaAs(001) bulk substrates by electron forward scattering in the form of Auger electron diffraction (AED), and by x-ray photoelectron spectroscopy (XPS) and reflection high energy electron diffraction to determine the mode of film growth and the formation of the interface. The coverage dependence of the AED forward scattering peaks is modeled and compared with the experimental data obtained for these overlayer systems. The authors found that the growth of Fe on ZnSe(001) at 175C proceeds in a predominantly layer-by-layer fashion, while a more three-dimensional growth mode occurs on the oxide-desorbed GaAs(001) substrate for both Fe and Co overlayers. Deposition of Co on the ZnSe(001) epilayers results in poorly ordered multicrystalline growth. The XPS data show that the metal/ZnSe interface is less reactive than the corresponding interface with the GaAs(001) substrate.

OSTI ID:
7047855
Report Number(s):
CONF-910115--
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:4; ISSN 0734-211X; ISSN JVTBD
Country of Publication:
United States
Language:
English