Hexagon-on-cube versus cube-on-cube epitaxy: The case of ZnSe(111) on SrTiO{sub 3}(001)
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Institut des Nanosciences de Paris (INSP), Universite Pierre et Marie Curie-Paris 6, CNRS UMR 7588, Campus de Boucicaut, 140 rue de Lourmel, 75015 Paris (France)
The structure of ZnSe epilayers grown by molecular-beam epitaxy on SrTiO{sub 3}(001) substrates has been studied using electron diffraction, x-ray diffraction, and electron microscopy. ZnSe, like certain other zinc-blende semiconductors, grows epitaxially along the [111] direction, contrary to what is expected from considerations on lattice registry and mismatch. First-principles calculations based on density-functional theory show that this peculiar epitaxy results from the subtle balance between strain and interface bonding during the growth of the first layer.
- OSTI ID:
- 21286999
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 15 Vol. 79; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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