Fe-catalytic growth of ZnSe nanowires on a ZnSe(001) surface at low temperatures by molecular-beam epitaxy

Journal Article · Mon Jul 25 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1997275· OSTI ID:20702512

Ohno, Yutaka; Shirahama, Takeo; Takeda, Seiji; Ishizumi, Atsushi; Kanemitsu, Yoshihiko ^[1]

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1. Department of Physics, Graduate School of Science, Osaka University, 1-1, Machikane-yama, Toyonaka, Osaka 560-0043 (Japan)

We grew ZnSe needle-like nanowires on a ZnSe/GaAs epilayer using Fe catalysts by means of molecular-beam epitaxy operated at low temperatures of 250-350 deg. C, which are comparable to the usual temperatures for fabrication of ZnSe-based optoelectronic devices. The diameters at the tops of the nanowires ranged from 8 to 20 nm, and the typical length was about 200 nm. The number density of the nanowires was the order of 10{sup 9} cm{sup -2}. A nanowire was the zinc blende structure and the longitudinal direction was <001>,<111>,<110>, or <112>. Photoluminescence spectroscopy implied that the optical property of the nanowires differs from that of the bulk crystals.

• OSTI ID: 20702512
• Journal Information: Applied Physics Letters, Vol. 87, Issue 4; Other Information: DOI: 10.1063/1.1997275; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CATALYSIS
CATALYSTS
CRYSTAL GROWTH
CRYSTALS
FABRICATION
GALLIUM ARSENIDES
IRON
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SURFACES
TEMPERATURE RANGE 0400-1000 K
ZINC SELENIDES
ZINC SULFIDES