Control of growth orientation for epitaxially grown ZnSe nanowires
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (China)
ZnSe nanowires (NWs) were grown on (111) (100), and (110)-oriented GaAs substrates by molecular-beam epitaxy via the vapor-liquid-solid reaction. The size dependence of NW growth orientation was studied by varying the Au catalyst size. Through detailed transmission electron microscopy studies, it was found that <111> orientation is the growth direction for NWs with size {>=}30 nm, while NWs with size around 10 nm prefer to grow along the <110> direction, with a small portion along the <112> direction. These observations have led to the realization of vertical ZnSe NWs with size around 10 nm grown on a GaAs(110) substrate.
- OSTI ID:
- 20778525
- Journal Information:
- Applied Physics Letters, Vol. 88, Issue 1; Other Information: DOI: 10.1063/1.2161397; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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