GaAs nanowires on Si substrates grown by a solid source molecular beam epitaxy

Journal Article · Mon Jul 31 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2245348· OSTI ID:20860654

Ihn, Soo-Ghang; Song, Jong-In; Kim, Young-Hun; Lee, Jeong Yong ^[1]

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1. Department of Information and Communications, Gwangju Institute of Science and Technology (GIST), 1 Oryong-dong, Buk-gu, Gwangju 500-712 (Korea, Republic of)

High-quality Au-catalyzed GaAs nanowires were grown on Si substrates by vapor-liquid-solid growth in a solid source molecular beam epitaxy system. X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy reveal that the GaAs nanowires were epitaxially grown on Si substrates with uniform diameters along the nanowires. While GaAs nanowires on Si(111) and (001) substrates were mainly grown along the <111> direction with zinc-blende and wurtzite structures, unusual GaAs nanowires grown along <001> with a pure zinc-blende structure were also observed. Strong photoluminescence was observed from GaAs nanowires grown on a Si(001) substrate at room temperature.

• OSTI ID: 20860654
• Journal Information: Applied Physics Letters, Vol. 89, Issue 5; Other Information: DOI: 10.1063/1.2245348; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GALLIUM ARSENIDES
GOLD
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ZINC SULFIDES