ZnTe nanowires grown on GaAs(100) substrates by molecular beam epitaxy

Journal Article · Mon Sep 25 00:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2357334· OSTI ID:20860934

Janik, E; Sadowski, J; Dluzewski, P; Kret, S; Baczewski, L T; Petroutchik, A; Lusakowska, E; Wrobel, J; Zaleszczyk, W; Karczewski, G; Wojtowicz, T; Presz, A ^[1]

---

1. Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw (Poland)

ZnTe nanowires with an average diameter of about 30 nm and lengths above 1 {mu}m were grown on GaAs(100) substrate by molecular beam epitaxy. The growth process was based on the Au-catalyzed vapor-liquid-solid mechanism. A thin gold layer (3-20 A ring thick) annealed in high vacuum prior to the nanowire growth was used as a source of catalytic nanoparticles. The nanowires are inclined about 55 deg. to the (100) substrate surface normal. They have a zinc-blende crystal structure and their growth axis is <111>.

• OSTI ID: 20860934
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
CRYSTAL STRUCTURE
GALLIUM ARSENIDES
GOLD
MOLECULAR BEAM EPITAXY
PARTICLES
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
VAPORS
ZINC SULFIDES
ZINC TELLURIDES