Optical properties of single ZnTe nanowires grown at low temperature

Journal Article · Sun Nov 24 23:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4832055· OSTI ID:22217832

Artioli, A.; Stepanov, P.; Den Hertog, M.; Bougerol, C.; Genuist, Y.; Donatini, F.; André, R.; Nogues, G.; Tatarenko, S.; Ferrand, D.; Cibert, J. ^[1]; Rueda-Fonseca, P. ^[1]; Bellet-Amalric, E.; Kheng, K. ^[2]

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1. Inst NEEL, Universiy of Grenoble Alpes, F-38042 Grenoble (France)
2. INAC, CEA and Université de Grenoble, 17 rue des Martyrs, 38054 Grenoble (France)

Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature (350 °C) under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per μm{sup 2}). The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are <111> oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires.

• OSTI ID: 22217832
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 103; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CATHODOLUMINESCENCE
DENSITY
EXCITONS
FABRICATION
GOLD
LAYERS
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
OXIDES
PHOTOLUMINESCENCE
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
STRAINS
TEMPERATURE RANGE 0065-0273 K
TRANSMISSION ELECTRON MICROSCOPY
WIRES
ZINC SULFIDES
ZINC TELLURIDES