ZnTe nanowires grown catalytically on GaAs (001) substrates by molecular beam epitaxy
- Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02- 668 Warsaw (Poland)
- Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warsaw (Poland)
We report on the first successful growth of ZnTe nanowires and on their basic structural properties. The nanowires were produced by molecular beam epitaxy (MBE) with the use of mechanism of catalytically enhanced growth. A thin layer of gold layer (3 to 20 A thick) annealed in high vacuum prior to the nanowires growth was used as a source of catalytic nanoparticles. Annealing of GaAs substrate with gold layer, performed prior to the MBE growth, leads to formation of Au-Ga eutectic droplets. The presence of Au-Ga droplets on GaAs substrate surface induce the ZnTe nanowire growth via vapor-liquid-solid mechanism, in growth conditions differing form those used in the molecular beam epitaxial growth of ZnTe layers only in the substrate temperature.
- OSTI ID:
- 21055038
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 893; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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