Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy

Journal Article · Mon Oct 20 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4898702· OSTI ID:22350951

Lu, Zhenyu; Chen, Pingping; Shi, Suixing; Yao, Luchi; Zhou, Xiaohao; Lu, Wei ^[1]; Zhang, Zhi; Zhou, Chen ^[2]; Zou, Jin ^[2]

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1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083 (China)
2. Materials Engineering, The University of Queensland, St. Lucia, Brisbane, Queensland 4072 (Australia)

In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111){sub B} surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet.

• OSTI ID: 22350951
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
BISMUTH
CATALYSTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIFFUSION LENGTH
DROPLETS
GALLIUM ARSENIDES
GOLD
INTERFACES
MOLECULAR BEAM EPITAXY
NANOWIRES
QUANTUM WIRES
SUPERSATURATION
SURFACES
ZINC SULFIDES