Atomistic structure of ZnSe nanowires on ZnSe(001) grown catalytically at low temperatures

Journal Article · Tue Apr 10 00:00:00 EDT 2007 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.2729797· OSTI ID:21055042

Ohno, Y; Shirahama, T; Takeda, S ^[1]; Ishizumi, A ^[2]; Kanemitsu, Y ^[2]

---

1. Department of Physics, Graduate School of Science, Osaka University, 1-1, Machikane-yama, Toyonaka, Osaka 560-0043 (Japan)
2. Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0192 (Japan)

Atomistic structure of ZnSe needle-like nanowires on a ZnSe/GaAs(001) epitaxial layer, grown catalytically by means of molecular beam epitaxy operated at low temperatures (527 or 573 K), was studied. A nanowire was the zinc blende structure. The diameter at the top was in the range from 8 to 20 nm, and the length was about 200 nm. It was implied that the optical property differs from that of the bulk crystals, presumably due to the wire confinement effect.

• OSTI ID: 21055042
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 893; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CATALYSIS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALS
GALLIUM ARSENIDES
LAYERS
LENGTH
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
QUANTUM WIRES
SEMICONDUCTOR MATERIALS
ZINC SELENIDES