Method of passivating semiconductor surfaces

Patent · Tue Jun 19 00:00:00 EDT 1990

OSTI ID:7020250

Wanlass, M W

A method is described for passivating Group III-V or II-VI semiconductor compound surfaces. The method includes selecting a passivating material having a lattice constant substantially mismatched to the lattice constant of the semiconductor compound. The passivating material is then grown as an ultrathin layer of passivating material on the surface of the Group III-V or II-VI semiconductor compound. The passivating material is grown to a thickness sufficient to maintain a coherent interface between the ultrathin passivating material and the semiconductor compound. In addition, a device formed from such method is also disclosed.

• DOE Contract Number: AC02-83CH10093
• Assignee: Dept. of Energy, Washington, DC (United States)
• Patent Number(s): US 4935384; A
• Application Number: PPN: US 7-284222
• OSTI ID: 7020250
• Resource Relation: Patent File Date: 14 Dec 1988
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
SEMICONDUCTOR DEVICES
DESIGN
SEMICONDUCTOR MATERIALS
PASSIVATION
FABRICATION
LATTICE PARAMETERS
PROTECTIVE COATINGS
SOLAR CELLS
THIN FILMS
COATINGS
DIRECT ENERGY CONVERTERS
EQUIPMENT
FILMS
MATERIALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR EQUIPMENT
360604* - Materials- Corrosion
Erosion
& Degradation
360601 - Other Materials- Preparation & Manufacture
140501 - Solar Energy Conversion- Photovoltaic Conversion