Method of preparing high-temperature-stable thin-film resistors

Title: Method of preparing high-temperature-stable thin-film resistors

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Abstract

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Inventors:

Raymond, Leonard S ^[1]

Tucson, AZ

Publication Date:: 1983-01-01

Research Org.:: Univ. of Arizona, Tucson, AZ (United States)

OSTI Identifier:: 864606

Patent Number(s):: US 4391846

Assignee:: United States of America as represented by United States (Washington, DC)

DOE Contract Number:: EY-76-S-02-4081

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: method; preparing; high-temperature-stable; thin-film; resistors; chemical; vapor; deposition; manufacturing; tungsten-silicide; predetermined; bulk; resistivity; temperature; coefficient; resistance; tcr; gaseous; compounds; tungsten; silicon; decomposed; hot; substrate; deposit; film; determined; crystallinity; grain; structure; controlled; ratio; manipulation; fabrication; parameters; allows; sensitive; control; properties; resistor; deposition method; temperature coefficient; chemical vapor; vapor deposition; thin-film resistors; film resistor; grain structure; gaseous compounds; gaseous compound; film resistors; sensitive control; /427/252/

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                    Raymond, Leonard S. Method of preparing high-temperature-stable thin-film resistors.  United States: N. p., 1983. 
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                    Raymond, Leonard S. Method of preparing high-temperature-stable thin-film resistors.  United States.

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                    Raymond, Leonard S. Sat .  
        "Method of preparing high-temperature-stable thin-film resistors".  United States.  https://www.osti.gov/servlets/purl/864606.

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@article{osti_864606,

  title        = {Method of preparing high-temperature-stable thin-film resistors},

  author       = {Raymond, Leonard S},

  abstractNote = {A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/864606},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1983},

  month        = {1}

}

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