skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of preparing high-temperature-stable thin-film resistors

Abstract

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Inventors:
 [1]
  1. (Tucson, AZ)
Publication Date:
Research Org.:
Arizona Univ., Tucson (USA)
OSTI Identifier:
864606
Patent Number(s):
US 4391846
Assignee:
United States of America as represented by United States (Washington, DC) OSTI
DOE Contract Number:  
EY-76-S-02-4081
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; preparing; high-temperature-stable; thin-film; resistors; chemical; vapor; deposition; manufacturing; tungsten-silicide; predetermined; bulk; resistivity; temperature; coefficient; resistance; tcr; gaseous; compounds; tungsten; silicon; decomposed; hot; substrate; deposit; film; determined; crystallinity; grain; structure; controlled; ratio; manipulation; fabrication; parameters; allows; sensitive; control; properties; resistor; deposition method; temperature coefficient; chemical vapor; vapor deposition; thin-film resistors; film resistor; grain structure; gaseous compounds; gaseous compound; film resistors; sensitive control; /427/252/

Citation Formats

Raymond, Leonard S. Method of preparing high-temperature-stable thin-film resistors. United States: N. p., 1983. Web.
Raymond, Leonard S. Method of preparing high-temperature-stable thin-film resistors. United States.
Raymond, Leonard S. Sat . "Method of preparing high-temperature-stable thin-film resistors". United States. https://www.osti.gov/servlets/purl/864606.
@article{osti_864606,
title = {Method of preparing high-temperature-stable thin-film resistors},
author = {Raymond, Leonard S.},
abstractNote = {A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {1}
}

Patent:

Save / Share: