Method of preparing high-temperature-stable thin-film resistors

Patent · Sat Jan 01 04:00:00 EST 1983

OSTI ID:864606

Raymond, Leonard S ^[1]

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1. Tucson, AZ

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

• Research Organization: Arizona Univ., Tucson (USA)
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4391846
• OSTI ID: 864606
• Country of Publication: United States
• Language: English

Related Subjects

/427/252/
allows
bulk
chemical
chemical vapor
coefficient
compounds
control
controlled
crystallinity
decomposed
deposit
deposition
deposition method
determined
fabrication
film
film resistor
film resistors
gaseous
gaseous compound
gaseous compounds
grain
grain structure
high-temperature-stable
hot
manipulation
manufacturing
method
parameters
predetermined
preparing
properties
ratio
resistance
resistivity
resistor
resistors
sensitive
sensitive control
silicon
structure
substrate
tcr
temperature
temperature coefficient
thin-film
thin-film resistors
tungsten
tungsten-silicide
vapor
vapor deposition