Method of preparing high-temperature-stable thin-film resistors

Patent · Sat Jan 01 00:00:00 EST 1983

OSTI ID:864606

Raymond, Leonard S ^[1]

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1. Tucson, AZ

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

• Research Organization: Univ. of Arizona, Tucson, AZ (United States)
• DOE Contract Number: EY-76-S-02-4081
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4391846
• OSTI ID: 864606
• Country of Publication: United States
• Language: English

Related Subjects

method
preparing
high-temperature-stable
thin-film
resistors
chemical
vapor
deposition
manufacturing
tungsten-silicide
predetermined
bulk
resistivity
temperature
coefficient
resistance
tcr
gaseous
compounds
tungsten
silicon
decomposed
hot
substrate
deposit
film
determined
crystallinity
grain
structure
controlled
ratio
manipulation
fabrication
parameters
allows
sensitive
control
properties
resistor
deposition method
temperature coefficient
chemical vapor
vapor deposition
thin-film resistors
film resistor
grain structure
gaseous compounds
gaseous compound
film resistors
sensitive control
/427/252/