Method of preparing high-temperature-stable thin-film resistors

Patent · 11 November 1980

OSTI ID:7098025

Raymond, L S

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

• DOE Contract Number: AS04-76ET28355
• Assignee: Dept. of Energy
• Patent Number(s): PATENTS-US-A206409
• Application Number: ON: DE83002348
• OSTI ID: 7098025
• Country of Publication: United States
• Language: English

Related Subjects

15 GEOTHERMAL ENERGY
150303* -- Geothermal Exploration & Exploration Technology-- Exploratory Drilling & Well Logging
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
FABRICATION
GEOTHERMAL WELLS
Geothermal Legacy
MANUFACTURING
METALS
PHYSICAL PROPERTIES
RESISTORS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SURFACE COATING
TRANSITION ELEMENTS
TUNGSTEN
WELL LOGGING EQUIPMENT
WELLS