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Method of preparing high-temperature-stable thin-film resistors

Patent ·
OSTI ID:5605947

A method of preparing composite, high-temperature-stable, thin-film resistors by chemical vapor deposition is disclosed. The resistor film of tungsten-silicon is formed from gaseous decomposable compounds of tungsten and silicon. The bulk resistivity of the film can be controlled and reproduced and the temperature coefficient of resistivity can be controlled over a range of values by process parameter variation.

Assignee:
TIC; EDB-80-048947; ERA-05-018788
Patent Number(s):
None
OSTI ID:
5605947
Country of Publication:
United States
Language:
English

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Related Subjects

15 GEOTHERMAL ENERGY
150303* -- Geothermal Exploration & Exploration Technology-- Exploratory Drilling & Well Logging
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
FABRICATION
GEOTHERMAL WELLS
HEAT RESISTANT MATERIALS
HIGH TEMPERATURE
MATERIALS
METALS
PHYSICAL PROPERTIES
REFRACTORY METALS
RESISTORS
SEMIMETALS
SILICON
SURFACE COATING
TRANSITION ELEMENTS
TUNGSTEN
WELL LOGGING EQUIPMENT
WELLS