Method of preparing high-temperature-stable thin-film resistors

Patent · Tue Jul 05 00:00:00 EDT 1983

OSTI ID:5484580

Raymond, L S

A chemical vapor deposition method is disclosed for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

• Assignee: Dept. of Energy
• Patent Number(s): US 4391846
• OSTI ID: 5484580
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
FILMS
HIGH TEMPERATURE
MANUFACTURING
PHYSICAL PROPERTIES
RESISTORS
SILICIDES
SILICON COMPOUNDS
STABILITY
SURFACE COATING
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
TUNGSTEN SILICIDES