Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
Patent
·
OSTI ID:864162
- Princeton, NJ
- Trenton, NJ
A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.
- Research Organization:
- RCA Corp
- DOE Contract Number:
- AC03-78ET21074
- Assignee:
- RCA Corporation (New York, NY)
- Patent Number(s):
- US 4322253
- OSTI ID:
- 864162
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/438/117/136/219/257/427/
amorphous
amorphous region
annealing
atomic
atomic hydrogen
band
band gap
cells
contacting
containing
containing entrapped
crystalline
crystalline silicon
crystallinity
devices
duration
energy
entrapped
fabricate
fabricated
followed
forming
gap
gap energy
graded
graded crystallinity
hydrogen
hydrogen rich
laser
laser annealing
laser treatment
material
method
novel
novel hydrogen
out-gasing
power
pulsed
pulsed laser
recrystallize
region
regions
regions containing
rich
rich single
selective
selective crystalline
semi-conductor
semi-conductor device
silicon
silicon material
silicon region
silicon solar
single
single crystal
single crystalline
solar
solar cell
solar cells
sufficient
sufficient duration
sufficient power
surface
surface window
thereafter
thereafter contacting
treatment
window
amorphous
amorphous region
annealing
atomic
atomic hydrogen
band
band gap
cells
contacting
containing
containing entrapped
crystalline
crystalline silicon
crystallinity
devices
duration
energy
entrapped
fabricate
fabricated
followed
forming
gap
gap energy
graded
graded crystallinity
hydrogen
hydrogen rich
laser
laser annealing
laser treatment
material
method
novel
novel hydrogen
out-gasing
power
pulsed
pulsed laser
recrystallize
region
regions
regions containing
rich
rich single
selective
selective crystalline
semi-conductor
semi-conductor device
silicon
silicon material
silicon region
silicon solar
single
single crystal
single crystalline
solar
solar cell
solar cells
sufficient
sufficient duration
sufficient power
surface
surface window
thereafter
thereafter contacting
treatment
window