Solar cell structure incorporating a novel single crystal silicon material

Patent · Sat Jan 01 00:00:00 EST 1983

OSTI ID:864609

Pankove, Jacques I ^[1]; Wu, Chung P ^[2]

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1. Princeton, NJ
2. Trenton, NJ

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

• Research Organization: RCA CORP
• DOE Contract Number: AC03-78ET21074
• Assignee: RCA Corporation (New York, NY)
• Patent Number(s): US 4392011
• OSTI ID: 864609
• Country of Publication: United States
• Language: English

Related Subjects

solar
cell
structure
incorporating
novel
single
crystal
silicon
material
hydrogen
rich
band
gap
energy
fabricated
forming
amorphous
region
graded
crystallinity
crystalline
thereafter
contacting
atomic
followed
pulsed
laser
annealing
sufficient
power
duration
recrystallize
out-gassing
fabricate
semiconductor
devices
cells
surface
window
regions
silicon material
gap energy
atomic hydrogen
laser annealing
thereafter contacting
cell structure
single crystalline
band gap
solar cell
solar cells
pulsed laser
silicon solar
single crystal
semiconductor device
semiconductor devices
crystalline silicon
hydrogen rich
crystal silicon
sufficient power
sufficient duration
surface window
rich single
novel hydrogen
graded crystallinity
amorphous region
/136/252/257/428/