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Title: Solar cell structure incorporating a novel single crystal silicon material

Abstract

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Inventors:
 [1];  [2]
  1. (Princeton, NJ)
  2. (Trenton, NJ)
Publication Date:
Research Org.:
RCA CORP
OSTI Identifier:
864609
Patent Number(s):
US 4392011
Assignee:
RCA Corporation (New York, NY) OSTI
DOE Contract Number:  
AC03-78ET21074
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
solar; cell; structure; incorporating; novel; single; crystal; silicon; material; hydrogen; rich; band; gap; energy; fabricated; forming; amorphous; region; graded; crystallinity; crystalline; thereafter; contacting; atomic; followed; pulsed; laser; annealing; sufficient; power; duration; recrystallize; out-gassing; fabricate; semiconductor; devices; cells; surface; window; regions; silicon material; gap energy; atomic hydrogen; laser annealing; thereafter contacting; cell structure; single crystalline; band gap; solar cell; solar cells; pulsed laser; silicon solar; single crystal; semiconductor device; semiconductor devices; crystalline silicon; hydrogen rich; crystal silicon; sufficient power; sufficient duration; surface window; rich single; novel hydrogen; graded crystallinity; amorphous region; /136/252/257/428/

Citation Formats

Pankove, Jacques I., and Wu, Chung P. Solar cell structure incorporating a novel single crystal silicon material. United States: N. p., 1983. Web.
Pankove, Jacques I., & Wu, Chung P. Solar cell structure incorporating a novel single crystal silicon material. United States.
Pankove, Jacques I., and Wu, Chung P. Sat . "Solar cell structure incorporating a novel single crystal silicon material". United States. doi:. https://www.osti.gov/servlets/purl/864609.
@article{osti_864609,
title = {Solar cell structure incorporating a novel single crystal silicon material},
author = {Pankove, Jacques I. and Wu, Chung P.},
abstractNote = {A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 1983},
month = {Sat Jan 01 00:00:00 EST 1983}
}

Patent:

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