Solar cell structure incorporating a novel single crystal silicon material
Patent
·
OSTI ID:864609
A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.
- Research Organization:
- RCA Corporation, New York, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC03-78ET21074
- Assignee:
- RCA Corporation (New York, NY)
- Patent Number(s):
- 4,392,011
- Application Number:
- 06/309,695
- OSTI ID:
- 864609
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/136/252/257/428/
amorphous
amorphous region
annealing
atomic
atomic hydrogen
band
band gap
cell
cell structure
cells
contacting
crystal
crystal silicon
crystalline
crystalline silicon
crystallinity
devices
duration
energy
fabricate
fabricated
followed
forming
gap
gap energy
graded
graded crystallinity
hydrogen
hydrogen rich
incorporating
laser
laser annealing
material
novel
novel hydrogen
out-gassing
power
pulsed
pulsed laser
recrystallize
region
regions
rich
rich single
semiconductor
semiconductor device
semiconductor devices
silicon
silicon material
silicon solar
single
single crystal
single crystalline
solar
solar cell
solar cells
structure
sufficient
sufficient duration
sufficient power
surface
surface window
thereafter
thereafter contacting
window
amorphous
amorphous region
annealing
atomic
atomic hydrogen
band
band gap
cell
cell structure
cells
contacting
crystal
crystal silicon
crystalline
crystalline silicon
crystallinity
devices
duration
energy
fabricate
fabricated
followed
forming
gap
gap energy
graded
graded crystallinity
hydrogen
hydrogen rich
incorporating
laser
laser annealing
material
novel
novel hydrogen
out-gassing
power
pulsed
pulsed laser
recrystallize
region
regions
rich
rich single
semiconductor
semiconductor device
semiconductor devices
silicon
silicon material
silicon solar
single
single crystal
single crystalline
solar
solar cell
solar cells
structure
sufficient
sufficient duration
sufficient power
surface
surface window
thereafter
thereafter contacting
window