Solar cell structure incorporating a novel single crystal silicon material

Patent · Tue Jul 05 04:00:00 EDT 1983

OSTI ID:5426669

Pankove, J I; Wu, C P

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

• Assignee: RCA Corporation
• Patent Number(s): US 4392011
• OSTI ID: 5426669
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
ANNEALING
BAND THEORY
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
ENERGY GAP
EQUIPMENT
FABRICATION
HEAT TREATMENTS
HYDROGEN
MONOCRYSTALS
NONMETALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RECRYSTALLIZATION
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT