Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

Patent · 29 March 1982

OSTI ID:7157537

Pankove, J I; Wu, C P

A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gassing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen. 2 figs.

• Research Organization: RCA Corp
• DOE Contract Number: AC03-78ET21074
• Assignee: RCA Corp., New York, NY (United States)
• Patent Number(s): A; US 4322253
• Application Number: PPN: US 6-145239
• OSTI ID: 7157537
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
ANNEALING
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
FABRICATION
HEAT TREATMENTS
HYDROGEN
LASER RADIATION
NONMETALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATIONS
RECRYSTALLIZATION
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT