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Title: Method of producing hydrogenated amorphous silicon film

Abstract

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

Inventors:
 [1]
  1. Wantagh, NY
Publication Date:
Research Org.:
Brookhaven National Laboratory (BNL), Upton, NY
OSTI Identifier:
863738
Patent Number(s):
US 4237150
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
EY-76-C-02-0016
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; producing; hydrogenated; amorphous; silicon; film; relates; produced; thermally; decomposing; silane; sih; gases; comprising; tungsten; carbon; foil; heated; temperature; 1400; degree; -1600; vacuum; 10; -6; 19; -4; torr; form; gaseous; mixture; atomic; hydrogen; depositing; gaseos; substrate; independent; outside; source; thermal; decomposition; presence; ammonia; atmosphere; chamber; enhances; photoconductivity; gases comprising; thermally decomposing; atomic hydrogen; silicon film; thermal decomposition; vacuum chamber; gaseous mixture; amorphous silicon; hydrogenated amorphous; producing hydrogen; producing hydrogenated; ammonia atmosphere; silicon produced; form hydrogen; form hydrogenated; /438/136/252/423/427/428/

Citation Formats

Wiesmann, Harold J. Method of producing hydrogenated amorphous silicon film. United States: N. p., 1980. Web.
Wiesmann, Harold J. Method of producing hydrogenated amorphous silicon film. United States.
Wiesmann, Harold J. Tue . "Method of producing hydrogenated amorphous silicon film". United States. https://www.osti.gov/servlets/purl/863738.
@article{osti_863738,
title = {Method of producing hydrogenated amorphous silicon film},
author = {Wiesmann, Harold J},
abstractNote = {This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {1}
}

Patent:

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