Method of producing hydrogenated amorphous silicon film

Patent · Mon Dec 31 23:00:00 EST 1979

OSTI ID:863738

Wiesmann, Harold J ^[1]

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1. Wantagh, NY

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY
• DOE Contract Number: EY-76-C-02-0016
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4237150
• OSTI ID: 863738
• Country of Publication: United States
• Language: English

Related Subjects

-1600
-4
-6
/438/136/252/423/427/428/
10
1400
19
ammonia
ammonia atmosphere
amorphous
amorphous silicon
atmosphere
atomic
atomic hydrogen
carbon
chamber
comprising
decomposing
decomposition
degree
depositing
enhances
film
foil
form
form hydrogen
form hydrogenated
gaseos
gaseous
gaseous mixture
gases
gases comprising
heated
hydrogen
hydrogenated
hydrogenated amorphous
independent
method
mixture
outside
photoconductivity
presence
produced
producing
producing hydrogen
producing hydrogenated
relates
sih
silane
silicon
silicon film
silicon produced
source
substrate
temperature
thermal
thermal decomposition
thermally
thermally decomposing
torr
tungsten
vacuum
vacuum chamber