Method of producing hydrogenated amorphous silicon film

Patent · Mon Dec 01 23:00:00 EST 1980

OSTI ID:6470187

Wiesmann, H J

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and si, from a tungsten or carbon foil heated to a temperature of about 1400-1600/sup 0/C, in a vacuum of about 10-6 to 19-4 torr, to form a gaseous mixture of atomic hydrogen a atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

• Assignee: Department of Energy
• Patent Number(s): US 4237150
• OSTI ID: 6470187
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
CHEMICAL REACTIONS
DECOMPOSITION
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
HIGH VACUUM
HYDRIDES
HYDROGEN COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PRODUCTION
PYROLYSIS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
THERMOCHEMICAL PROCESSES
VERY HIGH TEMPERATURE