Method of producing hydrogenated amorphous silicon film

Patent · Tue Dec 02 00:00:00 EST 1980

OSTI ID:6470187

Wiesmann, H J

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and si, from a tungsten or carbon foil heated to a temperature of about 1400-1600/sup 0/C, in a vacuum of about 10-6 to 19-4 torr, to form a gaseous mixture of atomic hydrogen a atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

• Assignee: Department of Energy
• Patent Number(s): US 4237150
• OSTI ID: 6470187
• Resource Relation: Patent File Date: Filed date 18 Apr 1979; Other Information: PAT-APPL-030974
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PRODUCTION
AMORPHOUS STATE
DEPOSITION
HIGH VACUUM
PHOTOCONDUCTIVITY
PYROLYSIS
SILANES
VERY HIGH TEMPERATURE
CHEMICAL REACTIONS
DECOMPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON COMPOUNDS
THERMOCHEMICAL PROCESSES
360601* - Other Materials- Preparation & Manufacture