Thermal decomposition of silane to form hydrogenated amorphous Si film

Patent · Tue Dec 02 04:00:00 EST 1980

OSTI ID:6776939

Ghosh, A K; Lutz, H A; Rock, E B; Strongin, M; Wiesmann, H J

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700-2300/sup 0/C, and preferably in a vacuum of about 10-8 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

• Assignee: Department of Energy
• Patent Number(s): US 4237151
• OSTI ID: 6776939
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
CHEMICAL REACTIONS
DECOMPOSITION
DEPOSITION
ELEMENTS
HIGH VACUUM
HYDRIDES
HYDROGEN COMPOUNDS
PRODUCTION
PYROLYSIS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
THERMOCHEMICAL PROCESSES
VERY HIGH TEMPERATURE