Thermal decomposition of silane to form hydrogenated amorphous Si film

Patent · Tue Dec 02 00:00:00 EST 1980

OSTI ID:6776939

Ghosh, A K; Lutz, H A; Rock, E B; Strongin, M; Wiesmann, H J

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and Si, at elevated temperatures of about 1700-2300/sup 0/C, and preferably in a vacuum of about 10-8 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseous mixture onto a substrate outside said source of thermal decomposition to form hydrogenated amorphous silicon.

• Assignee: Department of Energy
• Patent Number(s): US 4237151
• OSTI ID: 6776939
• Resource Relation: Patent File Date: Filed date 26 Jun 1979; Other Information: PAT-APPL-052278
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PRODUCTION
AMORPHOUS STATE
DEPOSITION
HIGH VACUUM
PYROLYSIS
SILANES
VERY HIGH TEMPERATURE
CHEMICAL REACTIONS
DECOMPOSITION
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
SEMIMETALS
SILICON COMPOUNDS
THERMOCHEMICAL PROCESSES
360601* - Other Materials- Preparation & Manufacture